1SV298

Ordering number :EN5224A 1SV298 Silicon Epitaxial PIN Diode π Type Attenuator Applications Features · Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · Small interterminal capacitance (C=0.23pF typ). · Small forward series resistance (rs=7.5Ω typ). Package Dimensions unit:mm 1269 [1SV298] 1:Cathode, Cathode 2:Anode 3:Anode, Cathode 4:Anode SANYO:CP4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VR IF P Tj Tstg Conditions Ratings 50 50 150 125 –55 to +125 Unit V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Reverse Current Forward Voltage Interterminal Capacitance Series Resistance Symbol VR IR VF C rs IR=10µA VR=50V IF=50mA VR=50V, f=1MHz IF=10µA, f=100MHz IF=10mA, f=100MHz 6.5 Conditions Ratings min 50 0.1 0.975 0.23 2400 7.5 10.0 1.15 typ max Unit V µA V pF Ω Ω Note : The specifications shown above are for each individual diode. · Marking:QV Electrical Connection 1:Cathode, Cathode 2:Anode 3:Anode, Cathode 4:Anode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/D2695GI/82595GI (KOTO) TA-0683, TA-0520 No.5224-1/3 1SV298 No.5224-2/3 1SV298 No products described or contained herein are intended for use in surgical implants, life-support ...