VARIABLE CAACITANCE DIODE
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV281
1SV281
VCO for V/UHF Band Radio
• High capaci...
Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV281
1SV281
VCO for V/UHF Band Radio
High capacitance ratio: C1 V/C4 V = 2.0 (typ.) Low series resistance: rs = 0.28 Ω (typ.) Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Junction temperature Storage temperature range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
Symbol
Test Condition
VR IR C1 V C4 V C1 V/C4 V rs
IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz
⎯ VR = 1 V, f = 470 MHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯
⎯⎯
3
15 16 17
7.3 8.0 8.7
1.8 2.0
⎯
⎯ 0.28 0.5
V nA pF pF ⎯ Ω
1 2007-11-01
1SV281
...
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