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1SV280

Toshiba Semiconductor

Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV280 1SV280 VCO for UHF Band Radio • High capacita...



1SV280

Toshiba Semiconductor


Octopart Stock #: O-96276

Findchips Stock #: 96276-F

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV280 1SV280 VCO for UHF Band Radio High capacitance ratio: C2 V/C10 V = 2.4 (typ.) Low series resistance: rs = 0.44 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C2 V C10 V C2 V/C10 V rs IR = 1 μA VR = 15 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Min Typ. Max Unit 15 ⎯ ⎯ ⎯⎯ 3 3.8 ⎯ 4.7 1.5 ⎯ 2.0 2.0 2.4 ⎯ ⎯ 0.44 0.6 V nA pF pF ⎯ Ω 1 2007-11-01 1SV280 ...




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