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1SV278

Toshiba Semiconductor

VARIABLE CAPACITANCD DIODE

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning · High capacitance ratio: C2 V/C25 V ...


Toshiba Semiconductor

1SV278

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning · High capacitance ratio: C2 V/C25 V = 6.5 (typ.) · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV278 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V rs IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz ¾ VR = 5 V, f = 470 MHz Note 1: Available in matched group for capacitance to 2.5%. C (max) - C (min) C (min) =< 0.025 (VR = 2~25 V) Marking JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Min Typ. Max Unit 30 ¾ ¾ ¾ ¾ 10 14.16 ¾ 16.25 2.11 ¾ 2.43 5.90 6.50 7.15 ¾ 0.4 0.55 V nA pF pF ¾ W 1 2003-04-02 1SV278 CAPACITANCE CHANGE RATIO @C (%) (Note 2) Note 2: dC = C (Ta) - C (25) C (25) ´ 100 (%) 2 2003-04-02 1SV278 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is th...




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