VARIABLE CAPACITANCD DIODE
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV278
TV Tuning
· High capacitance ratio: C2 V/C25 V ...
Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV278
TV Tuning
· High capacitance ratio: C2 V/C25 V = 6.5 (typ.) · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. · Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Peak reverse voltage Junction temperature Storage temperature range
Symbol
VR VRM
Tj Tstg
Rating
30 35 (RL = 10 kW)
125 -55~125
Unit
V V °C °C
1SV278
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
VR IR C2 V C25 V C2 V/C25 V rs
IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz
¾ VR = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.5%.
C (max) - C (min) C (min)
=< 0.025
(VR = 2~25 V)
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
30 ¾ ¾ ¾ ¾ 10 14.16 ¾ 16.25 2.11 ¾ 2.43 5.90 6.50 7.15 ¾ 0.4 0.55
V nA pF pF ¾ W
1 2003-04-02
1SV278
CAPACITANCE CHANGE RATIO @C (%) (Note 2)
Note 2:
dC
=
C
(Ta) - C (25) C (25)
´ 100
(%)
2 2003-04-02
1SV278
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is th...
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