MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3
Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW
NPN Transis...
MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3
Digital
Transistors (BRT) R1 = 1 kW, R2 = 1 kW
NPN Transistors with Monolithic Bias Resistor Network
This series of digital
transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
10
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR
(OUTPUT)
PIN 2 EMITTER (GRO...