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1SV276

Toshiba Semiconductor
Part Number 1SV276
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · High capacitance ratio...
Datasheet PDF File 1SV276 PDF File

1SV276
1SV276

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · High capacitance ratio: C1 V/C4 V = 2.
0 (typ.
) · Low series resistance: rs = 0.
22 Ω (typ.
) · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV276 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Marking JEDEC ― JEITA...


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