Automotive P-Channel MOSFET
www.vishay.com
SQ7415AEN
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
Description
www.vishay.com
SQ7415AEN
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
PowerPAK 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Marking Code: Q014
- 60 0.065 0.090 - 16 Single
S
G
D P-Channel MOSFET
FEATURES TrenchFET® Power MOSFET PowerPAK® Package
- Low Thermal Resistance, RthJC - Low 1.07 mm Profile AEC-Q101 Qualifiedd
100 % Rg and UIS Tested Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
PowerPAK 1212-8 SQ7415AEN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f
TC = 25 °Ca TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT - 60 ± 20 - 16 - 11 - 16 - 64 - 23 26 53 17 - 55 to + 175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mountc
RthJA
81 °C/W
Junction-to-Case (Drain)
RthJC
2.8
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, du...
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