SQP60N06-15

www.vishay.com SQP60N06-15 Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration TO-220AB 60 0.015 56 Single D FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G GD S Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET TO-220 SQP60N06-15-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 60 ± 20 56 32 60 190 29 42 107 35 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 40 1.4 UNIT V A mJ W °C UNIT °C/W S13-0840-Rev. A, 22-Apr-13 1 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DES...