Automotive P-Channel MOSFET
www.vishay.com
SQP90P06-07L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RD...
Description
www.vishay.com
SQP90P06-07L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration
TO-220AB
-60 0.0067 0.0088
-120 Single
FEATURES TrenchFET® power MOSFET
Package with low thermal resistance AEC-Q101 qualified d
100 % Rg and UIS tested
Material categorization: For definitions of compliance www.vishay.com/doc?99912
please
see
S
G
Top View
S D G
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
D P-Channel MOSFET
TO-220 SQP90P06-07L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current a
TC = 25 °C a TC = 125 °C
ID
Continuous Source Current (Diode Conduction) a
IS
Pulsed Drain Current b
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT -60 ± 20 -120 -87 -120 -480 -80 320 300 100
-55 to +175
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square Pcb (Fr-4 material). d. Parametric verification ongoing.
SYMBOL RthJA RthJC
LIMIT 40 0.5
UNIT °C/W
S14-0585-Rev. A, 17-Mar-14
1
Document Number: 6266...
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