SQM120N10-09

www.vishay.com SQM120N10-09 Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package TO-263 100 0.0095 120 Single TO-263 FEATURES TrenchFET® power MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 100 ± 20 120 73 120 480 73 266 375 125 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT V A mJ W °C UNIT °C/W S15-1875-Rev. C, 10-Aug-15 1 Document Number: 71515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCT...