www.vishay.com
SQM120N10-09
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) R...
www.vishay.com
SQM120N10-09
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
TO-263
100 0.0095
120 Single TO-263
FEATURES TrenchFET® power MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
Top View
S D G
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction) a
TC = 25 °C a TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 100 ± 20 120 73 120 480 73 266 375 125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
SYMBOL RthJA RthJC
LIMIT 40 0.4
UNIT V
A
mJ W °C
UNIT °C/W
S15-1875-Rev. C, 10-Aug-15
1
Document Number: 71515
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCT...