High Efficiency Barrier Rectifier
Features • VRRM= 60V
IF(AV)=2x 10A
• HEBR® Technology • Ultra-Low Forward Voltage Drop • Low Power Loss and High Efficie...
Description
Features VRRM= 60V
IF(AV)=2x 10A
HEBR® Technology Ultra-Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability Low Leakage Current Lead Free and Green Devices Available
Applications
Rectifiers in SMPS AC/DC Adaptors DC-DC Converters
RUS6020M
High Efficiency Barrier Rectifier
Pin Description
87 6 5
1 234 PIN1
PIN1
PDFN5060
PIN1,2 PIN5,6,7,8 PIN3,4 A1 K1/K2 A2
Absolute Maximum Ratings
High Efficiency Barrier Rectifier
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VRRM① VR①
VR(RMS)①
Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage RMS Reverse Voltage
IF(AV)
per Device Average Rectified Forward Current, TC=130°C
per Diode
IFSM TSTG
TJ
Peak Forward Surge Current,8.3ms Half Sine Wave Storage Temperature Range Operating Junction Temperature Range
Mounted on Large Heat Sink
60 60 42 20 10 340 -55 to 150 -55 to 150
V V V A A A °C °C
RθJC RθJA②
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
1.2 °C/W 30 °C/W
Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013
1
www.ruichips.com
RUS6020M
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RUS6020M Min. Typ. Max.
Static Characteristics
V(BR)R③ IR③
Reverse Breakdown Voltage per Diode Reverse Leakage Current per Diode
IR=300µA VR=60V, TC=25°C VR=60V, TC=125°C
60 100 300 5
IF=2A, TC=25°C
0.33 0.36
VF③
IF=5A, TC=25°C Forward Voltage Drop per Diod...
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