RUS5010M6

Features VRRM= 50V IF(AV)= 10A HEBR® Technology Ultra-Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability Low Leakage Current Lead Free and Green Devices Available Applications Rectifiers in SMPS Free Wheeling Diode DC-DC Converters RUS5010M6 High Efficiency Barrier Rectifier Pin Description 33 1 2 2 1 PDFN4053 1 3 2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VRRM① VR① VR(RMS)① Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage RMS Reverse Voltage IF(AV) Average Rectified Forward Current, TC=130°C IFSM Peak Forward Surge Current,8.3ms Half Sine Wave TSTG Storage Temperature Range TJ Operating Junction Temperature Range Mounted on Large Heat Sink RθJC RθJA② Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient High Efficiency Barrier Rectifier Rating Unit 50 50 35 10 250 -55 to 150 -55 to 150 V V V A A °C °C 2.1 °C/W 35 °C/W Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 www.ruichips.com RUS5010M6 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RUS5010M6 Min. Typ. Max. Static Characteristics V(BR)R③ Reverse Breakdown Voltage IR③ Reverse Leakage Current IR=300µA VR=50V, TC=25°C VR=50V, TC=125°C 50 300 5 IF=2A, TC=25°C 0.3 0.32 VF③ Forward Voltage Drop IF=5A, TC=25°C IF=10A, TC=25°C 0.32 0.38 0.41 0.45 IF=10A, TC=125°C 0.37 0.42 Unit V µA mA V V V V Notes:...