RU75230S

RU75230S N-Channel Advanced Power MOSFET Features 75V/230A, RDS (ON) =2.6mΩ(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching Speed High Power And Current Handling Capability 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available Applications High Current Switching Applications DC/DC Convertors Pin Description D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 75 ±25 175 -55 to 175 230 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 920 230 163 333 167 0.45 62.5 A A W °C/W °C/W 676 mJ Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU75230S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75230S Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=75V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=2...