N-Channel Advanced Power MOSFET
RU20130L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ....
Description
RU20130L
N-Channel Advanced Power MOSFET
MOSFET
Features
20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-252
Applications
High Frequency Synchronous Buck Converters for Computer Processor Power
DC-DC Converters
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012
Rating
20 ±20 175 -55 to 175
①
120
②
520
①
130
①
96 108 53.5 1.4
Unit
V °C °C A
A A W W °C/W
56 mJ www.ruichips.com
RU20130L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU20130L Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
④
RDS(ON) Drain-Source On-state Resistance
VGS=0V, IDS=250...
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