PPJT7838
50V N-Channel Enhancement Mode MOSFET
Voltage
50 V
Current 400mA
Features
RDS(ON) , VGS@10V, ID@500mA<1...
PPJT7838
50V N-Channel Enhancement Mode MOSFET
Voltage
50 V
Current 400mA
Features
RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) ,
[email protected], ID@200mA<1.95Ω RDS(ON) ,
[email protected], ID@100mA<4.0Ω RDS(ON) ,
[email protected], ID@10mA<4.0Ω(typ.) Advanced Trench Process Technology ESD Protected 2KV HBM Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case : SOT-363 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.006 grams Marking: T38
SOT-363
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Power Dissipation
TA=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 50 +20 400
1200 350 2.8 -55~150
357
UNITS V V mA mA
mW mW/ oC
oC
oC/W
June 17,2015-REV.00
Page 1
PPJT7838
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacita...