PPJS6800
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
3.9A
Features
RDS(ON) , VGS@10V, [email protected]<48...
PPJS6800
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
3.9A
Features
RDS(ON) , VGS@10V,
[email protected]<48mΩ RDS(ON) ,
[email protected],
[email protected]<53mΩ RDS(ON) ,
[email protected],
[email protected]<66mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: ST0
SOT-23 6L-1
Unit : inch(mm
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 30 +12 3.9 15.6 1.25 10
-55~150
100
UNITS V V A A W
mW/ oC oC
oC/W
December 31,2014-REV.03
Page 1
PPJS6800
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise...