PJC7472B

PPJC7472B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features  RDS(ON) , VGS@10V, ID@600mA<3Ω  RDS(ON) , [email protected], ID@200mA<4Ω  Advanced Trench Process Technology  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-323 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00018 ounces, 0.005 grams  Marking: C2B SOT-323 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 60 +30 250 1000 350 4 -55~150 357 UNITS V V mA mA mW mW/ oC oC oC/W June 12,2015-REV.00 Page 1 PPJC7472B Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time...