1SV237

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV237 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Total capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 mA VR = 50 V IF = 50 mA VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz Marking JEDEC ― JEITA ― TOSHIBA 1-3J1A Weight: 0.013 g (typ.) Min Typ. Max Unit 50 ¾ ¾ ¾ ¾ 0.1 ¾ 0.95 ¾ ¾ 0.25 ¾ ¾ 3.5 ¾ V mA V pF W 1 2003-03-24 1SV237 2 2003-03-24 1SV237 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specificati...