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3SK233

Part Number	3SK233
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Dual Gate MOS FET
Features	• Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Ite...
Published	Jan 29, 2016
Datasheet	3SK233 PDF File

Features

• Low voltage operation.
• Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltag...

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