HiRel RadHard Power-MOS
Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 11...
Description
Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad approved (Level R)
Hermetically sealed N-channel
1 2
3
4
Type
BUY25CS12K-01 BUY25CS12K-11
Marking
-
Pin Configuration 123 D SG G DS
Package 4 Not connected TO-257AA Not connected TO-257AA
Maximum Ratings Parameter Drain Source Voltage Gate Source Voltage Drain Gate Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Source Current Drain Current Pulsed, tp limited by Tjmax Total Power Dissipation 1) Junction Temperature Operating and Storage Temperature Avalanche Energy
Symbol VDS VGS VDG ID
IS IDM Ptot TJ Top EAS
Values 250 +/- 20 250
12.4 8 12.4 50 75 -55 to + 150 -55 to + 150 60
Thermal Characteristics Thermal Resistance (Junction to Case) Soldering Temperature
Notes.: 1) For TS ≤ 25°C. For TS > 25°C derating is required.
Rth JC
Tsol
1.66 250
Unit V V V A
A Apk W °C °C mJ
K/W °C
IFAG PMM RFS D HIR
1 of 8
March 2015
Data Sheet BUY25CS12K-01
Electrical Characteristics, at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min. max.
DC Characteristics
Breakdown Voltage Drain to Source ID = 0.25mA, VGS = 0V
BVDSS
Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS
VGS(th)
Gate to Source Leakage Current VDS = 0V, VGS = +/- 20V
IGSS
Drain...
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