BSP612P

BSP612P OptiMOS™-P Small-Signal-Transistor Features P-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V -60 120 170 -3 Qualified according to AEC Q101 100% lead-free; RoHS compliant PG-SOT-223 Halogen-free according to AEC61249-2-21 V mW A Type BSS612P Package SOT223 Tape and Reel Information H6327: 1000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Marking Halogen Free BSP612P Yes Packing Non dry Parameter Symbol Conditions Value Unit Continuous drain current I D T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt I D,pulse E AS dv /dt T A=25 °C I D =-3 A, V DD =-25V, R GS = 25 Ω I D=-3 A, V DS=-48 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation1) P tot T A=25 °C Operating and storage temperature T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 -3.0 -2.44 -12 150 6 ±20 1.8 -55 ... 150 1C 260 °C 55/150/56 A mJ kV/µs V W °C V °C °C Rev 2.0 page 1 2015-10-07 OptiMOS™-P Small-Signal-TransistSoyr mbol Conditions Thermal characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, junction - ambient Thermal resistance, junction - ambient R thJS R thJA minimal footprint R thJA 6 cm2 cooling area1) BSP612P min. Values typ. Unit max. 25 100 K/W - - 70 Electrical characteristics, at T j=...