Document
UNISONIC TECHNOLOGIES CO., LTD
8N65K-MT
Power MOSFET
8A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES
* RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=4A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL
1 TO-220F1
1 TO-220F2
1 TO-220F3
1 TO-262
1 TO-263
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N65KL-TF1-T
8N65KG-TF1-T
8N65KL-TF2-T
8N65KG-TF2-T
8N65KL-TF3T-T
8N65KG-TF3T-T
8N65KL-T2Q-T
8N65KG-T2Q-T
8N65KL-TQ2-T
8N65KG-TQ2-T
8N65KL-TQ2-R
8N65KG-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2 TO-220F3
TO-262 TO-263 TO-263
Pin Assignment 123 GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tape Reel
8N65KG-TF1-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3
T2Q: TO-262, TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-A98.F
8N65K-MT
MARKING
Lot Code
UTC 8N65K
1
L: Lead Free G: Halogen Free
Date Code
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 7
QW-R502-A98.F
8N65K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM EAS dv/dt
650 V ±30 V
8A 32 A 350 mJ 2.5 V/ns
TO-262/TO-263
155 W
Power Dissipation
TO-220F1/TO-220F2 TO-220F3
PD
39 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=10.93mH, IAS=8A, VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-262/TO-263
Junction to Case
TO-220F1/TO-220F2
TO-220F3
SYMBOL θJA
θJC
RATING 62.5 0.8
3.2
UNIT °C/W °C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
3 of 7
QW-R502-A98.F
8N65K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
Gate-Source Leakage Current ON CHARACTERISTICS
Forward Reverse
IGSS
VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250 μA
Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS
RDS(ON) VGS = 10 V, ID = 4A
Input Capacitance
CISS
Output Capacitance
COSS VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance SWITCHING CHARACTERISTICS
CRSS
Total Gate Charge (Note 1) Gate-Source Charge Gate-Drain Charge
QG QGS QGD
VDS=300V, ID=8A, VGS=10V IG=1mA (Note 1, 2)
Turn-On Delay Time (Note 1)
tD(ON)
Turn-On Rise Time Turn-Off Delay Time
tR tD(OFF)
VDD=200V, VDS=10V, ID=8A, RG=25Ω (Note 1, 2)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Drain-Source Diode Forward Voltage(Note 1)
VSD VGS = 0 V, IS =8A
Body Diode Reverse Recovery Time (Note 1)
trr VGS=0V, IS=8A
Body Diode Reverse Recovery Charge
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650 V 10 µA 100 nA -100 nA
2.0 4.0 V 1.3 Ω
1300 130
6
pF pF pF
32 nC 12 nC 7 nC 20 ns 17.2 ns 86 ns 26 ns
8A
32
1.4 360 3.8
A
V ns μC
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
4 of 7
QW-R502-A98.F
8N65K-MT
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ ISD
-
+ VDS -
L
Power MOSFET
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D=
Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak .