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8N65K-MT Dataheets PDF



Part Number 8N65K-MT
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 8N65K-MT Datasheet8N65K-MT Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MT Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * .

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UNISONIC TECHNOLOGIES CO., LTD 8N65K-MT Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=4A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1 TO-220F1 1 TO-220F2 1 TO-220F3 1 TO-262 1 TO-263 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N65KL-TF1-T 8N65KG-TF1-T 8N65KL-TF2-T 8N65KG-TF2-T 8N65KL-TF3T-T 8N65KG-TF3T-T 8N65KL-T2Q-T 8N65KG-T2Q-T 8N65KL-TQ2-T 8N65KG-TQ2-T 8N65KL-TQ2-R 8N65KG-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F3 TO-262 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel 8N65KG-TF1-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3 T2Q: TO-262, TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A98.F 8N65K-MT  MARKING Lot Code UTC 8N65K 1 L: Lead Free G: Halogen Free Date Code Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-A98.F 8N65K-MT Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 650 V ±30 V 8A 32 A 350 mJ 2.5 V/ns TO-262/TO-263 155 W Power Dissipation TO-220F1/TO-220F2 TO-220F3 PD 39 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=10.93mH, IAS=8A, VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C  THERMAL DATA PARAMETER Junction to Ambient TO-262/TO-263 Junction to Case TO-220F1/TO-220F2 TO-220F3 SYMBOL θJA θJC RATING 62.5 0.8 3.2 UNIT °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-A98.F 8N65K-MT Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V Gate-Source Leakage Current ON CHARACTERISTICS Forward Reverse IGSS VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS RDS(ON) VGS = 10 V, ID = 4A Input Capacitance CISS Output Capacitance COSS VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance SWITCHING CHARACTERISTICS CRSS Total Gate Charge (Note 1) Gate-Source Charge Gate-Drain Charge QG QGS QGD VDS=300V, ID=8A, VGS=10V IG=1mA (Note 1, 2) Turn-On Delay Time (Note 1) tD(ON) Turn-On Rise Time Turn-Off Delay Time tR tD(OFF) VDD=200V, VDS=10V, ID=8A, RG=25Ω (Note 1, 2) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage(Note 1) VSD VGS = 0 V, IS =8A Body Diode Reverse Recovery Time (Note 1) trr VGS=0V, IS=8A Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/μs Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 650 V 10 µA 100 nA -100 nA 2.0 4.0 V 1.3 Ω 1300 130 6 pF pF pF 32 nC 12 nC 7 nC 20 ns 17.2 ns 86 ns 26 ns 8A 32 1.4 360 3.8 A V ns μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-A98.F 8N65K-MT  TEST CIRCUITS AND WAVEFORMS D.U.T. + ISD - + VDS - L Power MOSFET RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak .


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