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1SV214

Toshiba Semiconductor
Part Number 1SV214
Manufacturer Toshiba Semiconductor
Description BARIABLE CAPACITANCE DIODE
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning · High capacitance ratio: C2 V/C25 V ...
Datasheet PDF File 1SV214 PDF File

1SV214
1SV214

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning · High capacitance ratio: C2 V/C25 V = 6.
5 (typ.
) · Low series resistance: rs = 0.
4 Ω (typ.
) · Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV214 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR = 1 mA IR VR = 28 V C2 V ...


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