6N65-C

UNISONIC TECHNOLOGIES CO., LTD 6N65-C Preliminary 6A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.7Ω @ VGS=10V, ID=3A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N65L-TA3-T 6N65G-TA3-T TO-220 6N65L-TF1-T 6N65G-TF1-T TO-220F1 6N65L-TF3-T 6N65G-TF3-T TO-220F 6N65L-TN3-R 6N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S Packing Tube Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A51.c 6N65-C Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 6 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 6 A IDM 24 A Avalanche Energy (Note 3) Single Pulsed Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 360 mJ 3 ns TO-220 120 W Power Dissipation TO-220F/TO-220F1 PD 40 W TO-...