4N80-N

UNISONIC TECHNOLOGIES CO., LTD 4N80-N 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80-N is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80-N is universally applied in high efficiency switch mode power supply.  FEATURES * RDS(on)<3.0Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N80L-TM3-T 4N80G-TM3-T 4N80L-TN3-R 4N80G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A96.A 4N80-N Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 V ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 4.0 A 16 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 250 mJ 4.0 V/ns Power Dissipation Junction Temperature PD 50 W TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are ...