4N70-E

UNISONIC TECHNOLOGIES CO., LTD 4N70-E 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.2Ω @ VGS = 10V, ID = 2.2A * Low Reverse Transfer Capacitance ( CRSS = Typical 13pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N70L-TF1-T 4N70G-TF1-T TO-220F1 4N70L-TF2-T 4N70G-TF2-T TO-220F2 4N70L-TF3-T 4N70G-TF3-T TO-220F 4N70L-TMN2-T 4N70G-TMN2-T TO-251NS2 4N70L-TN3-R 4N70G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-A72.D 4N70-E  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-A72.D 4N70-E Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 4.4 A Drain Current Continuous Pu...