4N60-C

UNISONIC TECHNOLOGIES CO., LTD 4N60-C Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 11  DESCRIPTION The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-220F TO-220F1 11 TO-220F2 TO-251  FEATURES * RDS(ON) < 2.5Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness 1 TO-252  SYMBOL  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TF3-T 4N60G-TF3-T 4N60L-TF1-T 4N60G-TF1-T 4N60L-TF2-T 4N60G-TF2-T 4N60L-TM3-T 4N60G-TM3-T 4N60L-TN3-R 4N60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 TO-220F2 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A42.C 4N60-C  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-A42.C 4N60-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Contin...