N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
10N65Z-Q
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65Z-Q is a high voltag...
Description
UNISONIC TECHNOLOGIES CO., LTD
10N65Z-Q
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N65ZL-TF1-T
10N65ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F1
Pin Assignment 123 GDS
Packing Tube
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1 of 7
QW-R502-980. A
10N65Z-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
VGSS
± 20
V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR ID IDM EAS EAR dv/dt
10 A 10 A 38 A 250 mJ 15.6 mJ 4.5 V/ns
Power Dissipation Junction Temperature
PD 50 W
TJ
+150
°C
Operating Temperature Storage Tempe...
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