Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Darlington Power Transistor
NPN: 2N6383, 2N6384, 2N6385
PNP: 2N6648, 2N6649, 2N6650
Features
• High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant
Mechanical Data
Case: Terminals:
Weight:
TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx)
Maximum Ratings (TC=25ºC unless noted otherwise)
Symbol
Description
2N6383 2N6648
2N6384 2N6649
VCBO
Collector-Base Voltage
40 60
VCEO
Collector-Emitter Voltage
40
60
VEBO
Emitter-Base Voltage
5
Collector Current (Continuous)
IC
Collector Current (Peak)
10 15
IB PD
RθJC TJ, TSTG
Base Current
Total Power Dissipation at TC=25°C
Derate above TA=25°C
Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range
0.25 100 0.571 1.75 -65 to +200
TO-3
2N6385 2N6650
80
80
Unit V V V
A
A W W/°C °C /W °C
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Rev. A/CZ Page 1 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Electrical Characteristics (TC=25ºC unless noted otherwise)
Symbol
Description
VCEO(sus) *
Collector-Emitter Sustaining Voltage
2N6383, 2N6648 2N6384, 2N6649 2N6385, 2N6650
ICEO
Collector Cut-off Current
2N6383, 2N6648 2N6384, 2N6649 2N6385, 2N6650
2N6383, 2N6648
ICEX
Collector Cut-off Current
2N6384, 2N6649
2N6385, 2N6650
IEBO
Emitter Cut-off Current
hFE*
D.C. Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage VBE(on) * Base-Emitter On Voltage
Min. 40 60 80 1000 100 -
hfe Small Signal Current Gain Cob Output Capacitance
*Pulse Test: Pulse Width =300µs, Duty Cycle ≤2%
1000 -
Max. -
1.0 1.0 1.0 0.3 3.0 0.3 3.0 0.3 3.0 10 20000
2.0 3.0 2.8 4.5
200
Unit
Conditions
V IC=200mA, IB=0
mA VCE=40V, IB=0
mA VCE=60V, IB=0
mA VCE=80V, IB=0
mA VCE=40V, VBE(off)=1.5V
mA
VCE=40V, VBE(off)=1.5V, TC=125°C
mA VCE=60V, VBE(off)=1.5V
mA
VCE=60V, VBE(off)=1.5V, TC=125°C
mA VCE=80V, VBE(off)=1.5V
mA
VCE=80V, VBE(off)=1.5V, TC=125°C
mA VEB=5.0V, IC=0
VCE=3.0V, IC=5.0A -
VCE=3.0V, IC=10A
V IC=5.0A, IB=10mA
V IC=10A, IB=100mA
V VCE=3.0V, IC=5.0A
V VCE=3.0V, IC=10A
-
VCE=5.0V, IC=1.0A, f=1KHz
pF VCB=10V, IE=0, f=1MHz
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Rev. A/CZ Page 2 of 7
Power Derating Curve
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Power dissipation PD (W)
Temperature TC (℃)
Equivalent Circuit
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Rev. A/CZ Page 3 of 7
Typical Characteristics Curves
Fig.1- DC Current Gain
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Fig.2- Collector Saturation Region
Collector-Emitter Voltage VCE (V)
DC Current Gain hFE
Collector Current IC (A) Fig.3- “On” Voltages
Base Current IB (mA) Fig.4- Switching Time
Time t (µS)
Voltages (V)
Collector Current IC (A) www.taitroncomponents.com
Collector Current IC (A)
Rev. A/CZ Page 4 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Active-Region Safe Operating Area (SOA)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicator. IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicator.
The data of SOA curve is base on TJ(PK) =200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤200°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Fig.5- Active-Region SOA
Collector Current IC (A)
Collector-Emitter Voltage VCE (V)
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Rev. A/CZ Page 5 of 7
Dimensions in mm
TO-3
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
DIM MIN.
MAX
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D 0.92 1.09
E 1.38 1.62
F
29.90
30.40
G
10.67
11.18
J
16.64
17.30
K
11.18
12.19
L
25.20
26.67
M 3.88 4.36
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Rev. A/CZ Page 6 of 7
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
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