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2N6383 Dataheets PDF



Part Number 2N6383
Manufacturers TAITRON
Logo TAITRON
Description Darlington Power Transistor
Datasheet 2N6383 Datasheet2N6383 Datasheet (PDF)

Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Darlington Power Transistor NPN: 2N6383, 2N6384, 2N6385 PNP: 2N6648, 2N6649, 2N6650 Features • High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 .

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Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Darlington Power Transistor NPN: 2N6383, 2N6384, 2N6385 PNP: 2N6648, 2N6649, 2N6650 Features • High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range 0.25 100 0.571 1.75 -65 to +200 TO-3 2N6385 2N6650 80 80 Unit V V V A A W W/°C °C /W °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/CZ Page 1 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Electrical Characteristics (TC=25ºC unless noted otherwise) Symbol Description VCEO(sus) * Collector-Emitter Sustaining Voltage 2N6383, 2N6648 2N6384, 2N6649 2N6385, 2N6650 ICEO Collector Cut-off Current 2N6383, 2N6648 2N6384, 2N6649 2N6385, 2N6650 2N6383, 2N6648 ICEX Collector Cut-off Current 2N6384, 2N6649 2N6385, 2N6650 IEBO Emitter Cut-off Current hFE* D.C. Current Gain VCE(sat) * Collector-Emitter Saturation Voltage VBE(on) * Base-Emitter On Voltage Min. 40 60 80 1000 100 - hfe Small Signal Current Gain Cob Output Capacitance *Pulse Test: Pulse Width =300µs, Duty Cycle ≤2% 1000 - Max. - 1.0 1.0 1.0 0.3 3.0 0.3 3.0 0.3 3.0 10 20000 2.0 3.0 2.8 4.5 200 Unit Conditions V IC=200mA, IB=0 mA VCE=40V, IB=0 mA VCE=60V, IB=0 mA VCE=80V, IB=0 mA VCE=40V, VBE(off)=1.5V mA VCE=40V, VBE(off)=1.5V, TC=125°C mA VCE=60V, VBE(off)=1.5V mA VCE=60V, VBE(off)=1.5V, TC=125°C mA VCE=80V, VBE(off)=1.5V mA VCE=80V, VBE(off)=1.5V, TC=125°C mA VEB=5.0V, IC=0 VCE=3.0V, IC=5.0A - VCE=3.0V, IC=10A V IC=5.0A, IB=10mA V IC=10A, IB=100mA V VCE=3.0V, IC=5.0A V VCE=3.0V, IC=10A - VCE=5.0V, IC=1.0A, f=1KHz pF VCB=10V, IE=0, f=1MHz www.taitroncomponents.com Rev. A/CZ Page 2 of 7 Power Derating Curve Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Power dissipation PD (W) Temperature TC (℃) Equivalent Circuit www.taitroncomponents.com Rev. A/CZ Page 3 of 7 Typical Characteristics Curves Fig.1- DC Current Gain Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Fig.2- Collector Saturation Region Collector-Emitter Voltage VCE (V) DC Current Gain hFE Collector Current IC (A) Fig.3- “On” Voltages Base Current IB (mA) Fig.4- Switching Time Time t (µS) Voltages (V) Collector Current IC (A) www.taitroncomponents.com Collector Current IC (A) Rev. A/CZ Page 4 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Active-Region Safe Operating Area (SOA) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicator. IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicator. The data of SOA curve is base on TJ(PK) =200°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤200°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Fig.5- Active-Region SOA Collector Current IC (A) Collector-Emitter Voltage VCE (V) www.taitroncomponents.com Rev. A/CZ Page 5 of 7 Dimensions in mm TO-3 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 DIM MIN. MAX A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 0.92 1.09 E 1.38 1.62 F 29.90 30.40 G 10.67 11.18 J 16.64 17.30 K 11.18 12.19 L 25.20 26.67 M 3.88 4.36 www.taitroncomponents.com Rev. A/CZ Page 6 of 7 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN R.


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