2N6385

2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEX VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6383 2N6384 2N6385 40 60 80 40 60 80 40 60 80 5.0 10 15 250 100 -65 to +200 1.75 UNITS V V V V A A mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO BVCER BVCER BVCER BVCEV BVCEV BVCEV VCEV=Rated VCEO, VBE(off)=1.5V VCEV=Rated VCEO, VBE(off)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=200mA (2N6383) IC=200mA (2N6384) IC=200mA (2N6385) IC=200mA, RBE=100Ω (2N6383) IC=200mA, RBE=100Ω (2N6384) IC=200mA, RBE=100Ω (2N6385) IC=200mA, VBE(off)=1.5V (2N6383) IC=200mA, VBE(off)=1.5V (2N6384) IC=200mA, VBE(off)=1.5V (2N6385) 40 60 80 40 60 80 40 60 80 MAX 300 3.0 1.0 10 UNITS μA mA mA mA V V V V V V V V V R1 (28-August 2008) CentralTM Semiconductor Corp. 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIO...