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MBRS3100P

ON Semiconductor

Surface Mount Schottky Power Rectifier

MBRS3100P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area met...


ON Semiconductor

MBRS3100P

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Description
MBRS3100P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection These are Pb-Free Packages Mechanical Characteristics Case: Epoxy, Molded Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 100 VOLTS SMC CASE 403AC MARKING DIAGRAM AYWW B310G G B310 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS3100PT3G SMC (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications,...




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