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1SS401

Toshiba Semiconductor
Part Number 1SS401
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low f...
Datasheet PDF File 1SS401 PDF File

1SS401
1SS401

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.
38 V (typ.
) : IR = 50μA (max) : CT = 46 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range VRM 25 V VR 20 V IFM 700 mA IO 300 mA P 100 mW JEDEC JEITA ― SC-70 Tj 125 °C TOSHIBA 1-2P1D Tstg −55 to 125 °C Weigh: 0.
006 g(typ.
) Topr −40 to 100 °C Note: Usi...


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