NE680

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 00 (CHIP) 18 (SOT 343 STYLE) E B 35 (MICRO-X) 19 (3 PIN ULTRA SUPER MINI MOLD) NE68018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 6V, 5 m A 3V, 5 mA 25 20 15 2.5 10 2.0 5 1.5 1.0 .5 300 500 1000 2000 3000 Frequency, f (GHz) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) California Eastern Laboratories NE680 SERIES DISCONTINUED ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT NF GNF MAG |S21E|2 hFE ICBO IEBO CRE3 PT RTH (J-A) RTH (J- C) Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Noise Figure at VCE = 6 V, IC...