DatasheetsPDF.com

1SS399

Toshiba Semiconductor
Part Number 1SS399
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications 1SS399 Unit: mm  ...
Datasheet PDF File 1SS399 PDF File

1SS399
1SS399

Overview
TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications 1SS399 Unit: mm  Small package : SC-61  Low forward voltage : VF = 1.
0 V (typ.
)  High voltage : VR = 400 V (min)  Fast reverse recovery time : trr = 0.
5 μs (typ.
)  Small total capacitance : CT = 2.
5 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation Junction temperature P 150 mW JEDEC Tj 125 °C JEITA ― SC-61 Storage temperature range ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)