1SS398

TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications 1SS398 Unit: mm  Small package : SC-59  Low forward voltage : VF = 1.0 V (typ.) @ IF = 100 mA  Fast reverse recovery time : trr = 0.5 μs (typ.)  Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation P 150 mW Junction temperature Tj 125 °C JEDEC TO-236MOD Storage temperature range Tstg −55 to 125 °C JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1-3G1G Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 0.7 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current T...