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1SS397

Silicon Diode

Description

TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  Small package : SC-70  Low forward voltage : VF = 1.0V (typ.)  High voltage : VR = 400V (min)  Fast reverse recovery time : trr = 0.5μs (typ.)  Small total capacitance : CT = 2.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Ch...

Toshiba Semiconductor

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