DFN1010D-3
PMXB75UPE
20 V, P-channel Trench MOSFET
8 July 2014
Product data sheet
1. General description
P-channel en...
DFN1010D-3
PMXB75UPE
20 V, P-channel Trench MOSFET
8 July 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 69 mΩ Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
3. Applications
High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -2.9 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C resistance
- 69 85 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMXB75UPE
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning informati...