DFN2020MD-6
PMPB215ENEA
80 V, single N-channel Trench MOSFET
18 December 2013
Product data sheet
1. General descripti...
DFN2020MD-6
PMPB215ENEA
80 V, single N-channel Trench MOSFET
18 December 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 1.9 A; Tj = 25 °C
Min Typ Max Unit
- - 80 V
-20 -
20 V
[1] - - 2.8 A
- 175 230 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMPB215ENEA
80 V, single N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
Graphic sy...