DatasheetsPDF.com

1SS393

Part Number	1SS393
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application 1SS393 Unit: mm z Low fo...
Datasheet	1SS393 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application 1SS393 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.
54V (typ.
) : IR = 5μA (max) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 100 * mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Operating temperature range Topr −40 to 100 °C JEITA SC-70 Note: Using continuously un...

Similar Datasheet

1SS300 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS301 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS301 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS302 Diode - Toshiba Semiconductor
1SS302 ULTRA HIGH SPEED SWITCHING APPLICATIONS - Guangdong Kexin Industrial
1SS302A Silicon Epitaxial Planar Switching Diodes - Toshiba
1SS306 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS307 Diode - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)