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1SS391

Part Number	1SS391
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 1SS391 Low Voltage High Speed Switching z Low forward vo...
Datasheet	1SS391 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 1SS391 Low Voltage High Speed Switching z Low forward voltage z Small package : VF (2) = 0.
23V (typ.
) @IF = 5mA : SC-61 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 15 10 200 * 100 * 1* 150 * 125 −55 to 125 −40 to 100 V V mA mA A mW °C °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/volt...

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