1SS387

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications 1SS387 Unit: mm z Compact 2-pin package – ideal for high-density mounting z Low forward voltage : VF (3) = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 200 100 1 150 * V V mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55∼125 °C JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1-1G1A Weight: 1.4mg (typ) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Tot...