FDMS8570SDC

FDMS8570SDC N-Channel PowerTrench® SyncFETTM FDMS8570SDC N-Channel PowerTrench® SyncFETTM July 2013 25 V, 60 A, 2.8 mΩ Features „ Dual CoolTM PQFN package „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 25 A „ High performance technology for extremely low rDS(on) „ SyncFETTM Schottky Body Diode „ RoHS Compliant General Description This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 S S S G D5 D6 4G 3S D D D D Top Power 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 1a) (Note 3) (Note 1a) 2S 1S Ratings 25 12 60 28 100 45 59 3.3 -55 to +150 Units V V A mJ W °C RθJC ...