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1SS382

Toshiba Semiconductor
Part Number 1SS382
Manufacturer Toshiba Semiconductor
Description Silicon diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed ...
Datasheet PDF File 1SS382 PDF File

1SS382
1SS382

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.
 Low forward voltage : VF (3) = 0.
92 V (typ.
)  Fast reverse recovery time : trr = 1.
6 ns (typ.
) 1SS382 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 125 mW PD (Note 2, 3) 100 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature Tstg (Note 1) −55...


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