DatasheetsPDF.com

1SS378

Toshiba Semiconductor

Silicon Epitaxial Schottky Barrie Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching 1SS378 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward curre...



Toshiba Semiconductor

1SS378

File Download Download 1SS378 Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)