DatasheetsPDF.com

1SS377

Toshiba Semiconductor

Silicon Epitaxial Schottky Barrie Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching 1SS377 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM ...



Toshiba Semiconductor

1SS377

File Download Download 1SS377 Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)