MTB5D0P03FP

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB5D0P03FP Spec. No. : C965FP Issued Date : 2015.07.20 Revised Date : 2015.07.21 Page No. : 1/8 Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package BVDSS ID @ VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -56A 4.2mΩ(typ) 4.8mΩ(typ) Symbol MTB5D0P03FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device Package MTB5D0P03FP-0-UB-S TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB5D0P03FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965FP Issued Date : 2015.07.20 Revised Date : 2015.07.21 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C (Package limited) Continuous Drain Current @VGS=-10V, TC=25°C (Silicon limited) Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C (Note 2) Continuous Drain Current @VGS=-10V, TA=70°C (Note 2) Pulsed Drain Current (Note 4) TC=25℃ (Note 1) Power Dissipation TC=100℃ TA=25℃ (Note 1) (Note 2) TA=70℃ (Note 2) Single P...