N-Channel Logic Level Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : CA00V8 Issued Date : 2015.05.25 Revised Date : Page No. : 1/9
N-Channel Logic Le...
Description
CYStech Electronics Corp.
Spec. No. : CA00V8 Issued Date : 2015.05.25 Revised Date : Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BV8 BVDSS ID @ TC=25°C, VGS=10V
30V 44A
ID @ TA=25°C, VGS=10V
14A
RDSON(TYP)
VGS=10V, ID=14A 7.3mΩ VGS=4.5V, ID=12A 11.2mΩ
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB11N03BV8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device MTB11N03BV8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C(Silicon Limit) Continuous Drain Current @ VGS=10V, TC=100°C(Silicon Limit) Continuous Drain Current @ VGS=10V, TC=25°C(Package Limit) Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=21A, RG=25Ω
Total Power Dissipation
TC=25℃ TA=25℃
Operating Junction and Storage Temperature Range
S...
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