N-Channel Logic Level Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : CA00Q8 Issued Date : 2015.05.01 Revised Date : Page No. : 1/9
N-Channel Logic Le...
Description
CYStech Electronics Corp.
Spec. No. : CA00Q8 Issued Date : 2015.05.01 Revised Date : Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BQ8 BVDSS ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=12A
RDSON(typ)@VGS=4.5V, ID=12A
30V 12A
8.8mΩ
12.8mΩ
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free and Halogen-free package
Symbol
MTB11N03BQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device MTB11N03BQ8-0-T3-G
Package
Shipping
SOP-8 (Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8 Issued Date : 2015.05.01 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V*3 Continuous Drain Current @ TA=70°C, VGS=10V*3 Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25℃ TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
10s Steady State
30 ±25 12 8.3 7.6 6.6 48 *1 12 72
5 *2 2.5 1.4 ...
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