MTB09N06I3

CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB09N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=20A 7.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 9.3 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol MTB09N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB09N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB09N06I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Notes 2 & 4) Continuous Drain Current @TA=70°C, VGS=10V (Notes 2 & 4) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (N...