TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS372
High Speed Switching Application
1SS372
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM...
